強磁性･強誘電（Bi,La）（Fe<sub>1-y</sub><i>M</i><sub>y</sub>）O<sub>3</sub>（<i>M </i>＝Ni, Co）薄膜の磁気特性に及ぼす Bサイトの置換元素および置換量の効果

High saturation magnetization, perpendicular magnetic anisotropy, and high Curie temperature are required for ferromagnetic/ferroelectric thin films to apply the Race-Track memory, which next-generation recording devices. Therefore, in BiFeO3-based fi lms, amount of substituted La Bi A-site was xed at about 50 at%, Ni or Co Fe B-site varied from 0 35 respectively. The properties of（Bi,La）（Fe,Ni）O3 and（Bi,La）（Fe,Co）O3 were investigated compared. As a result, lms with substitution 30 at% 28 showed best properties, maximum magnetization 78 emu/cm3 film substitution. Normalized coercive force plane by parallel lm plane（perpendicular anisotropy）and 4.1 more than 475°C, respectively